Flexible Single-Crystalline Ge p-Channel Thin-Film Transistors With Schottky-Barrier Source/Drain on Polyimide Substrates

Single-crystalline Ge p-channel thin-film transistors with Schottky-barrier source/drain (S/D) on flexible polyimide substrates are fabricated by a simple low-temperature process ( ¿ 250°C), which preserves the high mobility of Ge channel. Adhesive wafer bonding and Smart-Cut techniques were utilized to transfer the single-crystalline Ge thin film onto polyimide substrates. The Schottky-barrier S/D is formed by using Pt/n-Ge contact, showing a low hole barrier height. The device has a linear hole mobility of ~ 170 cm
²
·V
^-1
·s
^-1
and a saturation current of ~ 1.6 ¿A/¿m at V
_d
= - 1.5 V for the channel length and width of 15 and 280 ¿m, respectively.