Fabrication and Characterization of Low-Temperature Poly-Silicon Lateral p-i-n Diode

We have studied a lateral p-i-n photodiode made of excimer-laser-annealed poly-Si on glass. The diode quality factor, activation energy of diode currents at -3 V, and built-in potential were found to be 1.6, 0.5 eV, and 0.89 eV, respectively, which were achieved from temperature-dependent current-voltage characteristics. The 50-nm-thick p-i-n diode shows a high rectification ratio of > 10
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at ±1 V and a relatively high photoresponse at 500 lx. PACS: 81.05.Gc; 62.20.-x; 07.10.Lw; 07.10.Pz.