Two-dimensional analytical threshold voltage model for nanoscale graded channel gate stack DG MOSFETs

Due to the advancement of the oxide and channel materials engineering, nanoscale graded channel gate stack (GCGAS) Double Gate (DG) MOSFET has been investigated and expected to suppress the short-channel effects and improve the subthreshold performances. So, in this paper a new two-dimensional analytical threshold voltage model is proposed to study and improve of the behavior of the nanoscale DG MOSFET in subthreshold domain for nanoelectronics applications. The developed approaches are verified and validated by the good agreement found with the numerical simulation.