High-Performance a-IGZO TFT With $\hbox{ZrO}_{2}$ Gate Dielectric Fabricated at Room Temperature

We have investigated the high-performance oxide thin-film transistor (TFT) with an amorphous indium gallium zinc oxide (a-IGZO) channel and $\hbox{ZrO}_{2}$ gate dielectrics. The a-IGZO TFT is fully fabricated at room temperature without any thermal treatments. $\hbox{ZrO}_{2}$ is one of the most promising high- $k$ materials. The a-IGZO TFT (channel $W/L = \hbox{240/30}\ {\rm\mu}\hbox{m}$) with $\hbox{ZrO}_{2}$ shows high performance such as high on current of 2.11 mA and high field effect mobility of 28 $\hbox{cm}^{2}/(\hbox{V}\cdot\hbox{s})$ at the gate voltage 10 V. The threshold voltage and the subthreshold swing are 3.2 V and 0.56 V/decade, respectively. Note that the high-performance a-IGZO TFT is higher than ever shown in previous researches.