High Characteristic Temperature of Highly Stacked Quantum-Dot Laser for 1.55-$\mu$ m Band

We fabricated broad-area laser diodes comprising 30-layer stacks of InAs quantum dots (QDs) by using strain compensation. The devices exhibited ground-state lasing at 1529 nm in pulsed mode with a high characteristic temperature of 113 K around room temperature (20°C-80°C). Ground-state lasing was achieved because of the high QD density afforded by strain compensation.