Analysis and improved compact modeling of the breakdown behavior of sub-0.25 micron ESD protection ggNMOS devices

The work focuses on a better understanding of the sub-quater micron ggNMOS device breakdown, compact modeling of the band-to-band tunneling enhanced substrate current and the observed gate hot hole injection current. Simple implications of the improved subbreakdown current model on the ggnNMOS model behaviour are shown. Finally, the observed TLP failure mode of the investigated devices is discussed.