Low current and voltage resistive switching memory device using novel Cu/Ta2O5/W structure

Low current/voltage (∼10 nA/1.0V) resistive switching memory device in a Cu/Ta
2
O
5
/W structure has been proposed. The low resistance state (R
Low
) of the memory device decreases with increasing the programming current from 10 nA to 1mA, which can be useful for multi-level of data storage. This resistive memory devices have stable threshold voltage, good resistance ratio (R
High
/R
Low
) of 5.3×10
⁷
, good endurance of ≫10
³
cycles, and excellent retention (≫11 hours) with resistance ratio of ≫ 9×10
³
can be useful in future non-volatile memory applications.