Design of compact power divider using integrated passive device (IPD) technology

An integrated passive device (IPD) technology has been developed to achieve lower cost, further miniaturization and higher performance radio frequency (RF) devices for wireless communication system applications. This paper describes a compact power divider suitable for wireless system application using integrated passive device (IPD) technology based on silicon substrate. The 2-way power divider of wire bond and flip chip type were realized by thin film IPD technology. Electromagnetic (EM) simulation was used to optimize individual inductor design to improve its quality factor. The fabricated IPD 2-way power divider has insertion loss of ≪ 0.4dB, return loss of ≫15dB and isolation characteristic of ≫ 20dB for 801.11a band (4900MHz–5900MHz) and their dimensions are 1.2mm × 1.0mm for wire bond version and 1.2mm × 1.2mm for flip chip version, respectively. These compact power dividers can be used for a variety of applications in RF and microwave areas.