High performance integrated passive technology by SI-GaAs-based fabrication for RF and microwave applications

Conclusions IPD technology is paramount in furthering the performance and integration of functionality as well as shrinking in size in RF front-end systems. The proposed fabrication process enables a high performance integration of passive technology; the reliable NiCr TFR, spiral inductor with high Q factor, and MIM capacitor of compact size with high yield are realized by the IPD technology, and Wilkinson power divider is fabricated with excellent RF performances.