Tuning InAs/InP(001) quantum dot emission from 1.55 to 2 μm by varying cap-layer growth rate in metalorganic vapor phase epitaxy

This contribution shows that the control of the cap-layer growth rate of InAs/InP(001) quantum dots grown by metalorganic vapor phase epitaxy allows to control their emission wavelength. By varying the cap-layer growth rate over a factor 12, the emission is tuned between 1.55 and 2 mum.