An equivalent circuit model for the recovery component of BTI

In this work an equivalent circuit for the recoverable component of BTI is proposed. The circuit, based on diodes and capacitors for easy incorporation into circuit simulations, is able to reproduce correctly the stress, relaxation, voltage, frequency and duty factor dependences of the BTI-recovery previously reported. In addition, the model characteristics allow the extrapolation of BTI effects to very long stress times. BTI effects in a CMOS invertor have been studied using this model.