Hard and soft X-ray excited photoelectron spectroscopy study on high-κ gate insulators

Hard and soft X-ray photoelectron spectroscopy study on the composition and the chemical structures of transition layers at La
2
O
3
/Si(100), Gd
2
O
3
/Si(100), Lu
2
O
3
/Si(100) and La
2
O
3
/Y
2
O
3
/Si(100) interfaces and their thermal stabilities are discussed. Soft X-ray photoelectron spectroscopy study on the distribution of nitrogen atomos in nearly 1-nm-thick oxynitride films and the chemical structures of the transition layer at SiO
2
/Si(100) interface are also discussed.