New charge trapping phenomena in Recessed-Channel-Array-Transistor (RCAT) after Fowler-Nordheim stress

We have observed new charge trapping phenomena in sub-80-nm DRAM Recessed-Channel-Array-Transistor (RCAT) after Fowler-Nordheim (FN) stress. Gate stack process strongly affected the charge trapping and the trap generating in oxide bulk and interface of RCAT. According to the trapped charges and/or the generated traps after FN stress, the data retention time and writing capabilities of DRAM were dramatically changed. We have summarized the electrical characteristics of RCAT fabricated with different gate stack processes.