Analytical Study of leakage characteristics change during multilevel interconnect process using porogen-type porous SiOC (k=2.4)/Cu system

The change in leakage I-V characteristics by multilevel processing of Cu interconnects with porogen-type p-SiOC (k=2.4) was investigated. Although the change can be eliminated by UV-cure condition, it was found that another process conditions can affect the leakage characteristics; the combination of NH
3
plasma treatment after Cu-CMP and the additional UV-cure in multilevel process. It was also found that the influence of NH
3
plasma damage on interface between p-SiOC and cap-CVD was decreased using low-pressure ion-reaction oriented trench etching (LP-RIE).