Improvement of Fabrication Technology for InP Gunn Devices Using Trench Method

We have fabricated InP Gunn diodes using the improved fabrication technology in order to eliminate the problems resulting from the fabrication procedure of InP Gunn diodes for operation at 94 GHz. We see that the developed fabrication procedure using the trench method reduces the stress in InP epi-layers during alloy, and therefore the cracks in epi-layers were reduced.