A “Probe-Lift” MOS-Capacitor Technique for Measuring Very Low Oxide Leakage Currents and Their Effect on Generation Lifetime Extraction

A new method for precisely measuring low gate oxide currents by measuring the charge leaking through the oxide in a pulsed metal oxide semiconductor capacitor (MOS-C) is presented. Using basic equipment, it is possible to measure currents less than 10 fA/cm
²
. The relevant theory is developed to use these capacitance-time data to extract an approximate leakage current and the effect on the extracted generation lifetime. The technique is simple and requires the same equipment used for pulsed MOS-C generation lifetime measurements. Experimental results are presented, which are consistent with theory.