Novel 1 kv, normally-off, vertically integrated, dual-gate VJFET power switch with a low 4.6 mωcm2 on-state resistance

In this abstract, Northrop Grumman presents a novel monolithically integrated 1 kV normally-off VJFET power switch that combines a normally-off VJFET section with a normally-on VJFET section in a single vertical structure. The upper gates control the normally-off section while the lower-gates control the normally-on section. Depending on the specifics of the switching application, the device can be either controlled only by the upper gate in cascode configuration or be switched in shorted-gate configuration. In conclusion, Northrop Grumman has successfully developed a novel SiC, vertically integrated, 1 kV, dual-gate VJFET normally-off power switch with a low 4.6 mΩcm
²
on-state resistance.