Proton radiation effects on medium/large area Si PIN photodiodes for Optical Wireless Links for Intra-Satellite Communications (OWLS)

Components off the shelf (cots) photodiodes suitable for OWLS were irradiated with ~10 to ~60 MeV protons and up to fluences of ~2.5-10
¹²
p/cm
²
. Electrical and optoelectronic parameters were measured during the test (I-V curves, dark current, responsivity and ideal diode factor). Results on degradation and post-annealing are reported. Preliminary results on the lattice effects are also pointed.