Dopant Activation and Leakage Current Aspects of SDE/Halo CMOS Junctions Measured with Non-contact Junction Photo-Voltage Methods

The thin depletion layers and high leakage currents for shallow SDE/halo profiles rule out the continued use of direct contact sheet resistance probes. Non-contact probes based on junction photo-voltage (JPV) measurements provide accurate sheet resistance, Rs, values as well as quantitative evaluation of process-related aspects of junction leakage current. These combined JPV methods are referred to as "RsL" probes.