Excess Avalanche Noise in $\hbox{In}_{0.52}\hbox{Al}_{0.48}\hbox{As}$

Avalanche multiplication and excess noise arising from both electron and hole injection have been measured on a series of In
_0.52
Al
_0.48
As p
⁺
-i-n
⁺
and n
⁺
-i-p
⁺
diodes with nominal avalanche region widths between 0.1 and 2.5 mum. With pure electron injection, low excess noise was measured at values corresponding to effective k=beta/alpha between 0.15 and 0.25 for all widths. Enabled ionization coefficients were deduced using a non-local ionization model utilizing recurrence equation techniques covering an electric field range from approximately 200 kV/cm to 1 MV/cm