Monolithic Pixel Detector in a 0.15 μm SOI Technology

We describe a new pixel detector development project using a 0.15 μm fully-depleted CMOS SOI (silicon-on-insulator) technology. Additional processing steps for creating substrate implants and contacts to form sensor and electrode connections were developed for this SOI process. A diode test element group and several test chips have been fabricated and evaluated. The pixel detectors are successfully operated and first images are taken and sensibility to β-rays is confirmed. Back gate effects on the top circuits are observed and discussed.