Room-Temperature Deposited Titanium Silicate Thin Films for MIM Capacitor Applications

High-k titanium silicate (i.e., TiSiO
₄
) thin films of various thicknesses (in the 4.5- to 160-nm range) were successfully deposited by means of a sputter deposition process at room-temperature and integrated into metal-insulator-metal (MIM) capacitors. It is shown that the TiSiO
₄
-based capacitors can exhibit a capacitance density as high as 30 fF/mum
²
while maintaining low dielectric dispersion and losses. An excellent voltage linearity was also obtained ( alpha~600 ppm/V
²
at 8.2 fF/mum
²
) together with a high dielectric constant of 16.5 and low leakage current of about 10 nA/cm
²
at 1 MV/cm. Our results thus show that TiSiO
₄
films constitute a very promising approach for the achievement of high performance MIM capacitors