Large Signal Design of Distributed Power Amplifier with Discrete RF MOSFET Devices

This paper describes the analysis of distributed power amplifier using discrete RF MOSFET devices. Large signal design is discussed where non-uniform of drain line's characteristic impedance is employed to enhance the output power and efficiency performance. The amplifier demonstrates 1 Watt output power with 13dB associated gain and 26% of PAE over 100MHz to 600MHz frequency band