Impacts of Dopant Segregation on the Performance and Interface-State Density of the MOSFET With FUSI NiSi Gate

MOSFET characteristics of NiSi fully silicidation of polysilicon gates are found to be influenced by preimplanted dopant. Dopant segregation induced by silicidation at gate/oxide interface is observed to affect threshold voltage, subthreshold swing, effective mobility, and interface characteristics. The degradation of MOSFET characteristics in B-doped NiSi metal gate is found to be related to increasing interface-state density due to silicidation-induced impurity segregation