Electrical Characterization of $\hbox{ZrO}_{2}/\hbox{Si}$ Interface Properties in MOSFETs With $\hbox{ZrO}_{2}$ Gate Dielectrics

MOSFETs incorporating ZrO
₂
gate dielectrics were fabricated. The I
_DS
-V
_DS
, I
_DS
-V
_GS
, and gated diode characteristics were analyzed to investigate the ZrO
₂
/Si interface properties. The interface trap density (D
_it
) was determined to be about 7.4times10
¹²
cm
^-2
middoteV
^-1
using subthreshold swing measurement. The surface-recombination velocity (s
₀
) and the minority carrier lifetime in the field-induced depletion region (tau
_0,FIJ
) measured from the gated diodes were about 3.5times10
³
cm/s and 2.6times10
^-6
s, respectively. The effective capture cross section of surface state (sigma
_s
) was determined to be about 5.8times10
^-16
cm
²
using the gated diode technique and the subthreshold swing measurement. A comparison with conventional MOSFETs using SiO
₂
gate oxides was also made