Influence of$hboxO_2$Flow Rate on Structure and Properties of$hboxMgO_x$Films Prepared by Cathodic-Vacuum-Arc Ion Deposition System

Magnesium-oxide
$(hboxMgO_x)$
films have been prepared by a cathodic-vacuum-arc ion deposition system operated in an intermediate frequency pulse mode of substrate bias voltage at a mixed atmosphere of
$hboxO_2$
and Ar. The
$hboxO_2$
flow was adjusted in a range of 180–240 sccm at a fixed
$hboxO_2/hboxAr$
flow rate of 20. The structure, composition, morphology, and optical properties of the samples were analyzed by X-ray diffraction, Rutherford backscattering technique, atomic force microscopy, and UV-visible absorption spectra, respectively. Results show that the crystal orientation and grain size of the samples strongly depends on
$hboxO_2$
flow rate. Growth of Magnesium-oxide films prefers MgO