Maximizing Boron Activation in Solid Phase Epitaxy - A Case of Implant Choice and RTP Processing

Solid phase epitaxial regrowth (SPER) has been re-evaluated using molecular boron implantation techniques (B
18
H
22
) for the purpose of source/drain extensions as well as for the NFET's halo implants. It had been found that reverse annealing can be omitted. The well documented benefits of fast ramp spike temperature profiles allow the use of highly activating anneals above 800°C without significant de-activation, though extending the useful SPER temperature regime and still limiting diffusion. Typical dopant concentrations for halo implants can get significantly activated during low temperature SPER anneals for those implants.