Multi-Gate MOSFETs with Back-Gate Control

In this paper, we develop a design guideline for multi-gate MOSFET for V
_th
control. The design window of channel height (t
_Si
) and width (w
_Si
) to obtain both sufficiently large gamma and suppressed SCE in hp45 node LSTP devices is shown by 3D device simulation. The channel width dependence of gamma is also experimentally examined