Plasma doping and subsequent rapid thermal processing for ultra shallow junction formation

Authors summarize and update the status of plasma doping (PD) using He plasma amorphous (PA) technology and spectroscopic ellipsometry (SE). Authors also recommend PD as the best alternative method for ultra shallow junction formation at the 45 nm technology node and beyond. The latest annealing methods of laser annealing (LA) and flash lamp annealing (FLA) were combined with PD. Conventional spike RTA was also used to achieve adequate junction depth with lower resistance.