Organic Memory Device Fabricated Through Solution Processing

Novel organic memory devices including nonvolatile and write-once-read-many-times memory devices are reported. These devices were fabricated through a simple solution processing technique. Programmable electrical bistability was observed on a device made from a polymer film containing metal nanoparticles capped with saturated alkanethiol and small conjugated organic compounds sandwiched between two metal electrodes. The pristine device, which was in a low-conductivity state, exhibited an abrupt increase of current when the device was scanned up to a few volts. The high-conductivity state can be returned to the low-conductivity state by applying a certain voltage in the reverse direction. The device has a good stability in both states, and the transition from the low- to the high-conductivity state takes place in nanoseconds, so that the device can be used as a low-cost, high-density, high-speed, and nonvolatile memory. The electronic transition is attributed to the electric-field-induced charge transfer between the metal nanoparticles and small conjugated organic molecule. The electrical behavior of the device is strongly dependent on the materials in the polymer film. When gold nanoparticles capped with aromatic thiol were used, the device exhibited a transition from low- to high-conductivity state at the first voltage scan, and the device in the high-conductivity state cannot be returned to the low-conductivity state. This device can be used as a write-once-read-many-times memory device.