Fabrication and characterization of 1.5fF//spl mu/m/sup 2/ high-performance low-cost metal-insulator-metal capacitor in 0.13/spl mu/m and below Cu BEOL technologies

The capacitance density of industrial low-cost metal-insulator-metal (MIM) capacitor in Cu back-end-of-line (BEOL) technologies has been improved to 1.5 fF//spl mu/m/sup 2/ which is 50% higher than the current foundry standard of 1.5 fF//spl mu/m/sup 2/ based in J. C. Guo et al. (2003), P. Zurcher et al. (2002) and C. H. Ng et al. (2002). In this paper, we present a method to fabricate the high-density MIM with only one additional mask required on lop of the standard logic baseline Cu BEOL technologies. This MIM capacitor's reliability, voltage and temperature coefficients, thermal stability, and mismatching performance have been proved to be fully qualified to meet foundry's requirements. Without applying novel material nor using extra offsetting process loop, the proposed MIM capacitor has a very good performance-over-cost ratio, which is promising to be implemented in 0.13/spl mu/m and below Cu BEOL technologies.