Structure and ferroelectric properties of sputtered PMNT thin films

Thin films of strain free single c-domain / single crystal (PbMg/sub 1/3/Nb/sub 2/3/O/sub 3/)/sub 1-x/(PbTiO/sub 3/)/sub x/, x=0-0.4 were epitaxially grown on [001]SrTiO/sub 3/ and [001]MgO substrates by magnetron sputtering. The sputtered PMNT thin films showed bulk relaxor-like frequency dispersion in their dielectric properties but exhibited strongly diffused temperature anomaly unlikely to bulk PMNT. The d/sub 33/ and d/sub 31/ values at MPB composition lied 200-300pC/N and 70-100pC/N, respectively. These values were larger than those of PZT ceramics, but 10 to 15% of PMNT single crystal values.