Capacitance-voltage study of hydrogenated silicon-oxide-silicon structures fabricated by wafer bonding

Here we present the investigations of capacity-voltage characteristics on silicon-oxide-silicon-structures, which were obtained by a direct wafer bonding technique before and after hydrogen treatments. It is shown, that after hydrogenations for the bonded Si-SiO/sub 2/ interface a decreasing of the density of surface states and the traps localized in a relatively narrow energy takes place.