Optimized integrated p-i-n-structures for modulation in terahertz range

Using p-i-n-structures in terahertz range faces some problems. Namely, a change of the frequency dependent effective dielectric permittivity due to injected carriers in terahertz range is not so great as in millimeter wave one. Moreover, the parameters of p-i-n-structure, like the shape and sizes of injecting junctions, the depth of the structure, and matching layers, should differ from the case of millimeter wave range. Therefore, some optimization of modulation properties at higher frequencies must be done.