10-kV, 123-m/spl Omega//spl middot/cm2 4H-SiC power DMOSFETs

10-kV, 123-m/spl Omega//spl middot/cm
²
power DMOSFETs in 4H-SiC are demonstrated. A 42% reduction in R/sub on,sp/, compared to a previously reported value, was achieved by using an 8 × 10/sup 14/ cm/sup -3/ doped, 85-μm-thick drift epilayer. An effective channel mobility of 22 cm
²
/Vs was measured from a test MOSFET. A specific on-resistance of 123 m/spl Omega//spl middot/cm
²
were measured with a gate bias of 18 V, which corresponds to an E/sub ox/ of 3 MV/cm. A leakage current of 197 μA was measured at a drain bias of 10 kV from a 4H-SiC DMOSFET with an active area of 4.24 × 10/sup -3/ cm
²
. A switching time of 100 ns was measured in 4.6-kV, 1.3-A switching measurements. This shows that the 4H-SiC power DMOSFETS are ideal for high-voltage, high-speed switching applications.