Characterization of 850 nm AlGaAs/GaAs implant vertical cavity emitting lasers utilizing silicon implantation induced disordering

In this paper, we report a novel implant VCSELs utilizing silicon implantation induced disordering. This VCSELs exhibit kink-free current-light output performance with threshold currents /spl sim/2.2 mA, and the slope efficiencies /spl sim/0.45 W/A. The eye diagram of VCSEL operating at 2.125 Gb/s with 7 mA bias and 10 dB extinction ratio shows very clean eye with jitter less than 30 ps.