Growth of silicon nanocrystals with high number density for floating dot memory

In this paper, we have developed a novel growth of Si nanocrystals by using molecular beam deposition and post-growth oxidation. Formation of Si dots with a high number density (about 1/spl times/10/sup 12/ cm/sup -2/) and a small grain size (less than 10 nm in diameter) has been demonstrated. Memory operations of devices using these Si dots were also examined.