On the electron mobility in ultrathin SOI and GOI

The mobility of electrons in ultrathin silicon-on-insulator (SOI) and germanium-on-insulator (GOI) is studied. Quantum simulations are carried out to calculate phonon-limited mobility based on the experimental data for bulk. Modulation of the electron population in different ladders is shown to have a constructive effect in (111) Ge, whereas in (100) Ge mobility drops monotonically with either increase of gate bias or by thinning the GOI film.