Electrical parameter variation of PT-IGBT by backside proton irradiation

This paper describes the lifetime killing processes performed on 600V PT-IGBTs in order to improve their switching behaviour. The devices were proton irradiated from the backside at different doses and ion penetration ranges. Static and dynamic characterization allowed determining the effect of both variables on forward voltage drop, turn-off time and leakage current. Optimal irradiation conditions have been identified to reach the best trade-off between these electrical parameters.