Comparison of interdiffusion between single and stacked-layer InGaAs/GaAs quantum dots

In this work both thermal interdiffusion and impurity free vacancy disordering were studied and compared between two different QDs structures. One consisted of a single layer QDs, and the other of three-stacked-layer QDs. Different interdiffusion behaviors were observed in these QD structures and were discussed as the effects of strain accumulation and the presence of grown-in defects in QD system.