Patterning Si/sub 3/N/sub 4/ and TiN with scanning probe lithography

Processes to pattern nanostructures on the Si/sub 3/N/sub 4/ and TiN films based on scanning probe lithography have been demonstrated. The patterned Si/sub 3/N/sub 4/ and TiN films were used as etch masks to produce nanostructure on Si substrates. The oxide growth kinetics of both nitride films was studied. The oxide height vs. oxidation period obeys the logarithmic relationship. TiN is superior to Si/sub 3/N/sub 4/ as etching mask due to its high oxide growth rate and better performance for dry etching.