Effects of temperature on the etching properties of Bi/sub 4-x/La/sub x/Ti/sub 3/O/sub 12/ thin films

Summary form only given, as follows. Non-volatile ferroelectric random access memories (FRAMs) have widely studied for communication products and smart cards due to low operating voltage, fast switching speed, and nonvolatility. In recent years, high permittivity dielectrics have been studied intensively for ferroelectric random access memories (FRAM) owing to low operating voltage and fast switching speed and nonvolatility Bi-layered Bi/sub 4-x/La/sub x/Ti/sub 3/O/sub 12/ have been intensively studied.