Noncontact measurement method for S parameters

A technique to measure S parameters based on close field measurements is presented. This method uses the tangential components of the radiating electric field by the device under test (OUT) for extracting an incident wave and a reflected wave. The results of the reflection coefficient and phase factor, obtained by measurement in close field, show good agreement with the measurements obtained from the access ports of the OUT. The phase factor values are compared with the values calculated with commercial microwave simulation software.