1.3 to 1.5 /spl mu/m range emission from InAs/GaAs quantum dots grown by metalorganic chemical vapor deposition

In this paper, we demonstrated the long wavelength light emission from InAs quantum dots (QDs) directly capped with GaAs or covered with InGaAs strain reducing layer (SRL) grown by metalorganic chemical vapor deposition (MOCVD). These long wavelength QDs are grown by interrupted growth method with AsH/sub 3/ as V group precursors. 1.3 /spl mu/m light emission is observed as the QD directly capped with GaAs. By inserting 6 nm In/sub 0.25/Ga/sub 0.75/As, longer emission wavelength of 1.49 /spl mu/m is observed for the InAs quantum dots.