Fabrication and characterization of SOA and phase shifter integrated interferometer all-optical switches by single-step GaInAsP/InP selective area MOVPE

Simple, high-yield fabrication of GaInAsP/InP Mach-Zehnder and Michelson interferometer-based all-optical switches, integrated with semiconductor optical amplifiers (SOAs) and phase shifters, has been made possible by one-step MOVPE selective area growth (SAG). The SAG method yields smooth junction between the active and passive regions of the all-optical switches. Static all-optical switching performance includes 24dB extinction ratio and 6/spl pi/ phase shift by 18dBm. By utilizing integrated phase shifters, we could also calibrate the extinction ratio.