1.3 /spl mu/m-GaInNAsSb based material and its application to VCSELs

1.3 /spl mu/m-range GaInNAsSb material and its application to VCSELs were investigated. GaInNAsSb active layer that include the small amount of Sb can be easily grown in 2 dimensional manner as compared with GaInNAs due to the suppression of the formation of 3-dimensional growth in MBE growth. We obtained the lowest Jth per well (150A/cm/sup 2//well) as for the edge-emission type lasers due to the high quality of GaInNAsSb-QW. Using this material for the active media, we accomplished the first CW operation of 1.3 /spl mu/m-range GaInNAsSb VCSELs.