FIB-induced deposition of conducting material with intermediate resistivity for design debugging

Summary form only given. We have developed a process for the FIB deposition of material with a resistivity of 1-2/spl times/10/sup 6/ /spl mu//spl Omega/-cm by combining W(CO)/sub 6/ and tetramethylcyclotetrasiloxane (TMCTS) as precursors. Our experiments show that the resistivity of the material is a function of TMCTS at low concentration and reaches a plateau as TMCTS pressure increases. The resistivity value plateaus at /spl sim/2/spl times/10/sup 6/ /spl mu//spl Omega/-cm which is suitable for the circuit edit process. The material also shows excellent I-V linearity over voltages exceeding 10 volts. The reproducible resistivity along with the large linearity range enable the creation of structures with required resistances in the kilo-ohm to mega-ohm range by control of film thickness, width and length.