Improvement of short-channel characteristics of a 0.1-μm PMOSFET with ultralow-temperature nitride spacer by using a novel oxide capped boron uphill treatment

The thermal annealing at 720/spl deg/C for 2 hr (called boron uphill treatment) with an SiO
₂
-capped layer was applied after source/drain extensions (SDE) implantation to improve the short channel characteristics of a 0.1-μm PMOSFET with an ultra-low temperature nitride spacer. The influence and the mechanism of the capped layer on this uphill treatment were investigated. The results show that the capped layer treatment indeed leads to a shallower junction, improved V/sub th/ roll-off characteristic, and added immunity against subsurface punchthrough.