Avalanche multiplication and breakdown in Al/sub x/Ga/sub 1-x/As (x < 0.9)

Measurements carried out on thick Al/sub x/Ga/sub 1-x/As (x < 0.9) diodes showed that the ionization coefficients of Al/sub x/Ga/sub 1-x/As become widely different when x /spl ges/ 0.63 and are virtually independent of x for x /spl ges/ 0.72. A strong dead space effect is also observed in thick Al/sub x/Ga/sub 1-x/As structures with x /spl ges/ 0.6. The breakdown voltage is found to increase at a slower rate with x when x > 0.63.