Tl-containing semiconductors for temperature-insensitive wavelength semiconductor lasers

LDs in WDM systems must be equipped with Peltier elements to stabilize LD temperature. To solve this problem, the use of temperature-independent bandgap semiconductors as an active layer of LDs was proposed We proposed Tl-containing quaternary semiconductors TlInGaP and TlInGaAs as new Ill-V semiconductors showing temperature-independent bandgap energy for the possible application to the temperature-stable lasing wavelength laser diodes.